| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
| SCS112AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| LSIC2SD120A10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| BAT54 BAT54C BAT54S BAT54A BAT54_SERIES_4 BAT54SER |
DIODE KLEINSIGNAL SMD SCHOTTKY 贴片肖特基二极管KLEINSIGNAL
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer
Schottky barrier (double) diodes
From old datasheet system
DISCRETE SEMICONDUCTORS
SCHOTTKY BARRIER DOUBLE DIODES
|
Won-Top Electronics Co., Ltd.
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
